1N6116
vs
JANTXV1N6116
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
DIGITRON SEMICONDUCTORS
|
MICROSS COMPONENTS
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Min |
25.7 V
|
24.3 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
37.4 V
|
39.27 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-XALF-W2
|
O-MALF-W2
|
| JESD-609 Code |
e0
|
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Package Body Material |
UNSPECIFIED
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
BIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
2 W
|
1.5 W
|
| Rep Pk Reverse Voltage-Max |
20.6 V
|
20.6 V
|
| Reverse Current-Max |
1 µA
|
1 µA
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
ZENER
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
11
|
9
|
| Package Description |
|
HERMETIC SEALED PACKAGE-2
|
| Additional Feature |
|
LOW IMPEDANCE
|
| Breakdown Voltage-Nom |
|
27 V
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500/516
|
|
|
|
Compare JANTXV1N6116 with alternatives