1N6116A vs JAN1N6112A feature comparison

1N6116A Bkc Semiconductors Inc

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JAN1N6112A Semicoa Semiconductors

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Rohs Code No
Part Life Cycle Code Transferred Contact Manufacturer
Ihs Manufacturer BKC SEMICONDUCTORS INC SEMICOA CORP
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 24.3 V 17.1 V
Breakdown Voltage-Nom 27 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 39.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 20.6 V
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 11 9
ECCN Code EAR99
HTS Code 8541.10.00.50
Reference Standard MIL-19500/516

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