1N6122US
vs
1N6122US
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
MICROCHIP TECHNOLOGY INC
|
| Part Package Code |
MELF
|
|
| Package Description |
HERMETIC SEALED, GLASS, MELF-2
|
HERMETIC SEALED, GLASS, D-5B, E-MELF-2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
METALLURGICALLY BONDED
|
HIGH RELIABILITY
|
| Breakdown Voltage-Min |
44.7 V
|
42.47 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
2 W
|
2 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
35.8 V
|
35.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
7
|
5
|
| Factory Lead Time |
|
21 Weeks
|
| Breakdown Voltage-Nom |
|
47 V
|
| Clamping Voltage-Max |
|
67.8 V
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 1N6122US with alternatives
Compare 1N6122US with alternatives