1N6127 vs 1N6127E3 feature comparison

1N6127 Microsemi Corporation

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1N6127E3 Microsemi Corporation

Buy Now Datasheet
Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS, E PACKAGE-2 O-LALF-W2
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 71.3 V 67.5 V
Breakdown Voltage-Nom 75 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 108 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 56 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD PURE MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 31 1

Compare 1N6127 with alternatives

Compare 1N6127E3 with alternatives