1N6127 vs JAN1N6127 feature comparison

1N6127 Microsemi Corporation

Buy Now Datasheet

JAN1N6127 Defense Logistics Agency

Buy Now Datasheet
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP DEFENSE LOGISTICS AGENCY
Package Description HERMETIC SEALED, GLASS, E PACKAGE-2 HERMETIC SEALED, GLASS, E, 2 PIN
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 71.3 V 67.735 V
Breakdown Voltage-Nom 75 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 108 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2 W 3 W
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 56 V 56 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 31 4
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard MIL-19500/516
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 1N6127 with alternatives

Compare JAN1N6127 with alternatives