1N6153A vs JAN1N6156A feature comparison

1N6153A STMicroelectronics

Buy Now Datasheet

JAN1N6156A Microsemi Corporation

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer STMICROELECTRONICS MICROSEMI CORP
Package Description GLASS, CB-432, 2 PIN HERMETIC SEALED, GLASS, C PACKAGE-2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 31.5 V
Breakdown Voltage-Min 28.5 V 37.1 V
Breakdown Voltage-Nom 30 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 41.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code E-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Package Body Material GLASS GLASS
Package Shape ELLIPTICAL ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Rep Pk Reverse Voltage-Max 22.8 V 29.7 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 12 6
Pbfree Code No
Pin Count 2
Additional Feature HIGH RELIABILITY
Operating Temperature-Min -55 °C
Qualification Status Not Qualified
Reference Standard MIL-19500

Compare 1N6153A with alternatives

Compare JAN1N6156A with alternatives