1N6170A vs JAN1N6170A feature comparison

1N6170A New Jersey Semiconductor Products Inc

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JAN1N6170A Microchip Technology Inc

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Part Life Cycle Code Active Active
Ihs Manufacturer NEW JERSEY SEMICONDUCTOR PRODUCTS INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Breakdown Voltage-Min 142.5 V 142.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Polarity BIDIRECTIONAL BIDIRECTIONAL
Rep Pk Reverse Voltage-Max 114 V 114 V
Technology AVALANCHE AVALANCHE
Base Number Matches 11 6
Rohs Code No
Factory Lead Time 25 Weeks
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
JESD-30 Code O-LALF-W2
JESD-609 Code e0
Number of Terminals 2
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 3 W
Qualification Status Qualified
Reference Standard MIL-19500
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position AXIAL

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