1N6270TR vs 1N6267A-T feature comparison

1N6270TR Microsemi Corporation

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1N6267A-T Diodes Incorporated

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP DIODES INC
Package Description PLASTIC, CASE 1, 2 PIN O-XALF-W2
Pin Count 2
Manufacturer Package Code CASE 1
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10 V 7.14 V
Breakdown Voltage-Min 8.19 V 6.45 V
Breakdown Voltage-Nom 9.1 V 6.8 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 13.8 V 10.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-XALF-W2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 7.37 V 5.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 1000 µA

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