1N6271A vs 1N6271 feature comparison

1N6271A International Semiconductor Inc

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1N6271 International Semiconductor Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE LOW IMPEDANCE
Breakdown Voltage-Max 10.5 V 11 V
Breakdown Voltage-Min 9.5 V 9 V
Breakdown Voltage-Nom 10 V 10 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 14.5 V 15 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201 DO-201
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8.55 V 8.1 V
Reverse Current-Max 10 µA 10 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 3
Package Description O-PALF-W2

Compare 1N6271A with alternatives

Compare 1N6271 with alternatives