1N6271A vs 1N6271A feature comparison

1N6271A MDE Semiconductor Inc

Buy Now Datasheet

1N6271A Suzhou Good-Ark Electronics Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC GOOD-ARK ELECTRONICS CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 10.5 V
Breakdown Voltage-Min 9.5 V
Breakdown Voltage-Nom 10 V
Case Connection ISOLATED
Clamping Voltage-Max 14.5 V
Configuration SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-201
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard MIL-STD-750; UL LISTED
Rep Pk Reverse Voltage-Max 8.55 V
Reverse Current-Max 10 µA
Reverse Test Voltage 8.55 V
Surface Mount NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 1 1