1N6297 vs 1N6298 feature comparison

1N6297 Comchip Technology Corporation Ltd

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1N6298 Digitron Semiconductors

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD DIGITRON SEMICONDUCTORS
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Breakdown Voltage-Max 132 V 143 V
Breakdown Voltage-Min 108 V 117 V
Breakdown Voltage-Nom 120 V 130 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 173 V 187 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 5 V 3.5 V
JEDEC-95 Code DO-201AE DO-201
JESD-30 Code O-PALF-W2 O-XALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.52 W
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 97.2 V 105 V
Reverse Current-Max 5 µA 1 µA
Reverse Test Voltage 97.2 V 105 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 36 38
JESD-609 Code e0
Terminal Finish TIN LEAD