1N6297A
vs
1N6298
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
EIC SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
126 V
|
143 V
|
| Breakdown Voltage-Min |
114 V
|
117 V
|
| Breakdown Voltage-Nom |
120 V
|
130 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
165 V
|
187 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
5 W
|
5 W
|
| Rep Pk Reverse Voltage-Max |
102 V
|
106 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Base Number Matches |
3
|
4
|
| Package Description |
|
O-PALF-W2
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-201
|
| JESD-30 Code |
|
O-PALF-W2
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
UL RECOGNIZED
|
| Terminal Finish |
|
PURE TIN
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
|
|
|
Compare 1N6297A with alternatives
Compare 1N6298 with alternatives