1N6298-TP vs 1N6297 feature comparison

1N6298-TP Micro Commercial Components

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1N6297 Galaxy Semi-Conductor Co Ltd

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICRO COMMERCIAL COMPONENTS CORP GALAXY SEMI-CONDUCTOR CO LTD
Part Package Code DO-201AE
Package Description PLASTIC PACKAGE-2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 143 V 132 V
Breakdown Voltage-Min 117 V 108 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE DO-201AE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 105 V 97.2 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 1 36
Breakdown Voltage-Nom 120 V
Clamping Voltage-Max 173 V
Forward Voltage-Max (VF) 3.5 V
Reverse Current-Max 1 µA
Reverse Test Voltage 97.2 V

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