1N6357E3TR vs SICT-8 feature comparison

1N6357E3TR Microsemi Corporation

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SICT-8 Semicon Components Inc

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SEMICON COMPONENTS INC
Part Package Code DO-13
Package Description O-MALF-W2 O-XALF-W2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 9.4 V 9.4 V
Case Connection CATHODE ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-202AA
JESD-30 Code O-MALF-W2 O-XALF-W2
JESD-609 Code e3 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material METAL UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 8 V 8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Breakdown Voltage-Nom 9.4 V
Clamping Voltage-Max 11.5 V
Reverse Current-Max 25 µA

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