1N6373RL4 vs SMBJ9.0AHE3/52 feature comparison

1N6373RL4 Motorola Semiconductor Products

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SMBJ9.0AHE3/52 Vishay Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MOTOROLA INC VISHAY SEMICONDUCTORS
Package Description O-PALF-W2 R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY, LOW IMPEDANCE UL RECOGNIZED, HIGH RELIABILITY
Breakdown Voltage-Min 6 V 10 V
Case Connection ISOLATED
Clamping Voltage-Max 9.4 V 15.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 R-PDSO-C2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 1500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 5 V 9 V
Reverse Current-Max 300 µA
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 5 1
Pbfree Code Yes
Part Package Code DO-214AA
Pin Count 2
Samacsys Manufacturer Vishay
Breakdown Voltage-Max 11.1 V
Breakdown Voltage-Nom 10.55 V
JEDEC-95 Code DO-214AA
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

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