1N6475
vs
1N6475
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROSS COMPONENTS
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
HERMETIC SEALED, GLASS, G, 2 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| Factory Lead Time |
27 Weeks
|
21 Weeks
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
| Breakdown Voltage-Min |
43.7 V
|
43.7 V
|
| Breakdown Voltage-Nom |
44 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
63.5 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
40 V
|
40.3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
10
|
11
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Power Dissipation-Max |
|
3 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 1N6475 with alternatives
Compare 1N6475 with alternatives