1N821E3
vs
1N821A
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
DIE-3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
METALLURGICALLY BONDED
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-204AH
|
|
| JESD-30 Code |
S-XXSS-N3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
SQUARE
|
|
| Package Style |
SPECIAL SHAPE
|
|
| Power Dissipation-Max |
0.475 W
|
0.25 W
|
| Reference Voltage-Nom |
6.2 V
|
6.2 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
ZENER
|
|
| Terminal Form |
NO LEAD
|
|
| Terminal Position |
UNSPECIFIED
|
|
| Voltage Temp Coeff-Max |
0.62 mV/°C
|
|
| Voltage Tol-Max |
4.84%
|
5%
|
| Base Number Matches |
2
|
27
|
| Rohs Code |
|
No
|
| Dynamic Impedance-Max |
|
10 Ω
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
175 °C
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Working Test Current |
|
7.5 mA
|
|
|
|
Compare 1N821E3 with alternatives