1SS250TE85R vs BAV302-13 feature comparison

1SS250TE85R Toshiba America Electronic Components

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BAV302-13 Diodes Incorporated

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP DIODES INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V
JESD-30 Code R-PDSO-G3 O-LELF-R2
Non-rep Pk Forward Current-Max 2 A
Number of Elements 1 1
Number of Phases 1
Number of Terminals 3 2
Operating Temperature-Max 125 °C 175 °C
Output Current-Max 0.1 A 0.125 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.15 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.06 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING WRAP AROUND
Terminal Position DUAL END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Part Package Code MELF
Package Description O-LELF-R2
Pin Count 2
Case Connection ISOLATED
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 200 V

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