1V5KE10A vs 1N6357TR feature comparison

1V5KE10A Taiwan Semiconductor

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1N6357TR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10.5 V
Breakdown Voltage-Min 9.5 V 9.4 V
Case Connection ISOLATED CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-201AE DO-202AA
JESD-30 Code O-XALF-W2 O-MALF-W2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 8.55 V 8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 3 1
Pbfree Code No
Part Package Code DO-13
Package Description HERMETIC SEALED, METAL, DO-13, 2 PIN
Pin Count 2
Breakdown Voltage-Nom 9.4 V
Clamping Voltage-Max 11.5 V

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