2KBP01M-G vs KBP201GC2G feature comparison

2KBP01M-G Sangdest Microelectronics (Nanjing) Co Ltd

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KBP201GC2G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PSIP-W4 R-PSFM-T4
Reach Compliance Code unknown compliant
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 100 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.2 V
JESD-30 Code R-PSIP-W4 R-PSFM-T4
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 60 A 60 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Output Current-Max 2 A 2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 100 V 50 V
Surface Mount NO NO
Terminal Form WIRE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.80
JESD-609 Code e3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Terminal Finish MATTE TIN

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