2KBP10M vs 3N252 feature comparison

2KBP10M Mospec Semiconductor Corp

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3N252 General Instrument Corp

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer MOSPEC SEMICONDUCTOR CORP GENERAL INSTRUMENT CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 1000 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.3 V
Non-rep Pk Forward Current-Max 60 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 165 °C 150 °C
Output Current-Max 2 A 1.5 A
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Base Number Matches 1 1
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code R-PSIP-W4
Number of Terminals 4
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Reverse Current-Max 5 µA
Terminal Form WIRE
Terminal Position SINGLE

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