2KBP10M
vs
BR810D
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
SEMITRON
|
| Reach Compliance Code |
unknown
|
unknown
|
| Breakdown Voltage-Min |
1000 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1 V
|
| Non-rep Pk Forward Current-Max |
60 A
|
50 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
165 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
2 A
|
2 A
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Base Number Matches |
14
|
3
|
| Rohs Code |
|
No
|
| ECCN Code |
|
EAR99
|
| JESD-609 Code |
|
e0
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare BR810D with alternatives