2N4222
vs
2N5669
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
INTER F E T CORP
|
MOTOROLA INC
|
| Package Description |
CYLINDRICAL, O-MBCY-W4
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
InterFET
|
|
| Configuration |
SINGLE
|
SINGLE
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| Feedback Cap-Max (Crss) |
2 pF
|
3 pF
|
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
TO-72
|
TO-92
|
| JESD-30 Code |
O-MBCY-W4
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.3 W
|
0.31 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
10
|
| Rohs Code |
|
No
|
| DS Breakdown Voltage-Min |
|
25 V
|
| Drain Current-Max (ID) |
|
0.02 A
|
| JESD-609 Code |
|
e0
|
| Power Gain-Min (Gp) |
|
16 dB
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 2N4222 with alternatives
Compare 2N5669 with alternatives