2N5686G
vs
JAN2N5686
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
SILICON TRANSISTOR CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
50 A
|
25 A
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Number of Elements |
1
|
1
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
2 MHz
|
2 MHz
|
| Base Number Matches |
3
|
8
|
| Rohs Code |
|
No
|
| Case Connection |
|
COLLECTOR
|
| DC Current Gain-Min (hFE) |
|
15
|
| JEDEC-95 Code |
|
TO-204
|
| JESD-30 Code |
|
O-MBFM-P2
|
| JESD-609 Code |
|
e0
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
200 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
FLANGE MOUNT
|
| Power Dissipation-Max (Abs) |
|
300 W
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
|
PIN/PEG
|
| Terminal Position |
|
BOTTOM
|
|
|
|
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