2N5836
vs
MRF5812R1
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
MOTOROLA INC
|
| Package Description |
,
|
SMALL OUTLINE, R-PDSO-G8
|
| Reach Compliance Code |
unknown
|
unknown
|
| Collector Current-Max (IC) |
0.2 A
|
0.2 A
|
| Configuration |
Single
|
SEPARATE, 2 ELEMENTS
|
| DC Current Gain-Min (hFE) |
25
|
30
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
2 W
|
1.7 W
|
| Surface Mount |
NO
|
YES
|
| Transition Frequency-Nom (fT) |
2000 MHz
|
5500 MHz
|
| Base Number Matches |
4
|
5
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.29.00.75
|
| Additional Feature |
|
LOW NOISE
|
| Collector-Base Capacitance-Max |
|
2 pF
|
| Collector-Emitter Voltage-Max |
|
15 V
|
| Highest Frequency Band |
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
|
R-PDSO-G8
|
| JESD-609 Code |
|
e0
|
| Number of Elements |
|
2
|
| Number of Terminals |
|
8
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Power Dissipation Ambient-Max |
|
1.67 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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