2N7002,215 vs 2N6661 feature comparison

2N7002,215 Nexperia

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2N6661 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer NEXPERIA MICROCHIP TECHNOLOGY INC
Part Package Code TO-236
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95 8542.39.00.01
Date Of Intro 1995-04-01
Samacsys Manufacturer Nexperia Microchip
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 90 V
Drain Current-Max (ID) 0.3 A 0.35 A
Drain-source On Resistance-Max 5 Ω 4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF 10 pF
JEDEC-95 Code TO-236AB TO-39
JESD-30 Code R-PDSO-G3 O-MBCY-W3
JESD-609 Code e3 e4
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Reference Standard IEC-60134 TS 16949
Surface Mount YES NO
Terminal Finish TIN NICKEL GOLD
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Package Description TO-39, 3 PIN
Factory Lead Time 6 Weeks
Additional Feature HIGH INPUT IMPEDANCE
Case Connection DRAIN
Power Dissipation Ambient-Max 6.25 W
Power Dissipation-Max (Abs) 6.25 W
Pulsed Drain Current-Max (IDM) 3 A
Qualification Status Not Qualified
Turn-off Time-Max (toff) 10 ns
Turn-on Time-Max (ton) 10 ns

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