2N7002
vs
BFW12
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
Package Description |
SOT-23, 3 PIN
|
CYLINDRICAL, O-MBCY-W3
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
1991-09-30
|
|
Samacsys Manufacturer |
Nexperia
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
60 V
|
30 V
|
Drain Current-Max (ID) |
0.3 A
|
0.01 A
|
Drain-source On Resistance-Max |
5 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
Feedback Cap-Max (Crss) |
10 pF
|
0.8 pF
|
JEDEC-95 Code |
TO-236AB
|
TO-72
|
JESD-30 Code |
R-PDSO-G3
|
O-MBCY-W3
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
Operating Temperature-Max |
150 °C
|
175 °C
|
Operating Temperature-Min |
-65 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
METAL
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
0.83 W
|
|
Reference Standard |
IEC-60134
|
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
TIN
|
|
Terminal Form |
GULL WING
|
WIRE
|
Terminal Position |
DUAL
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
43
|
1
|
Case Connection |
|
SHIELD
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare 2N7002 with alternatives
Compare BFW12 with alternatives