2SB857
vs
2SD2161-AZ
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
NEC ELECTRONICS CORP
|
| Package Description |
,
|
PLASTIC, ISOLATED TO-220, FULL PACK-3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2018-11-28
|
|
| Collector Current-Max (IC) |
4 A
|
5 A
|
| Collector-Emitter Voltage-Max |
50 V
|
100 V
|
| Configuration |
SINGLE
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
60
|
500
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation-Max (Abs) |
40 W
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
15 MHz
|
30 MHz
|
| VCEsat-Max |
1 V
|
|
| Base Number Matches |
5
|
2
|
| Part Package Code |
|
SFM
|
| Pin Count |
|
3
|
| Case Connection |
|
ISOLATED
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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