2SC3827-T1BT54
vs
MRF5812R1
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NEC ELECTRONICS AMERICA INC
|
MOTOROLA INC
|
| Package Description |
PLASTIC, SC-59, 3 PIN
|
SMALL OUTLINE, R-PDSO-G8
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.02 A
|
0.2 A
|
| Collector-Base Capacitance-Max |
1 pF
|
2 pF
|
| Collector-Emitter Voltage-Max |
15 V
|
15 V
|
| Configuration |
SINGLE
|
SEPARATE, 2 ELEMENTS
|
| DC Current Gain-Min (hFE) |
140
|
30
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G8
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
3
|
8
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
1300 MHz
|
5500 MHz
|
| VCEsat-Max |
0.5 V
|
|
| Base Number Matches |
1
|
5
|
| Rohs Code |
|
No
|
| HTS Code |
|
8541.29.00.75
|
| Additional Feature |
|
LOW NOISE
|
| JESD-609 Code |
|
e0
|
| Power Dissipation Ambient-Max |
|
1.67 W
|
| Power Dissipation-Max (Abs) |
|
1.7 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare 2SC3827-T1BT54 with alternatives
Compare MRF5812R1 with alternatives