3.0SMCJ18A-G vs SMLJ18A-H feature comparison

3.0SMCJ18A-G Sangdest Microelectronics (Nanjing) Co Ltd

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SMLJ18A-H Bourns Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD BOURNS INC
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 23.3 V 22.1 V
Breakdown Voltage-Min 20 V 20 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 18 V 18 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature PRSM-MIN
Breakdown Voltage-Nom 21.05 V
Clamping Voltage-Max 29.2 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 5 W
Terminal Finish Matte Tin (Sn)

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