3.0SMCJ26C vs SMDJ26CAHM6G feature comparison

3.0SMCJ26C PanJit Semiconductor

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SMDJ26CAHM6G Taiwan Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DO-214AB
Package Description R-PDSO-C2 R-PDSO-C2
Pin Count 2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW INDUCTANCE EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 36.6 V 31.9 V
Breakdown Voltage-Min 28.9 V 28.9 V
Breakdown Voltage-Nom 32.75 V 30.4 V
Clamping Voltage-Max 42.1 V 42.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 19 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 6.5 W
Terminal Finish MATTE TIN

Compare 3.0SMCJ26C with alternatives

Compare SMDJ26CAHM6G with alternatives