3.0SMCJ58C vs 3.0SMCJ58CATR-A feature comparison

3.0SMCJ58C MDE Semiconductor Inc

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3.0SMCJ58CATR-A Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DO-214AB
Pin Count 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 71.2 V 71.2 V
Breakdown Voltage-Min 64.4 V 64.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 58 V 58 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
Package Description R-PDSO-C2
Terminal Finish PURE TIN

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Compare 3.0SMCJ58CATR-A with alternatives