3Z30 vs 1N6282ARL4 feature comparison

3Z30 Toshiba America Electronic Components

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1N6282ARL4 onsemi

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP ON SEMICONDUCTOR
Reach Compliance Code unknown not_compliant
Additional Feature FORMED LEAD OPTIONS ARE AVAILABLE EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
Breakdown Voltage-Max 33 V 31.5 V
Breakdown Voltage-Min 27 V 28.5 V
Breakdown Voltage-Nom 30 V 30 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 10 µA
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 3
Package Description O-PALF-W2
Pin Count 2
Manufacturer Package Code CASE 41A-04
ECCN Code EAR99
HTS Code 8541.10.00.50
Clamping Voltage-Max 41.4 V
JESD-609 Code e3
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 25.6 V
Terminal Finish TIN

Compare 3Z30 with alternatives

Compare 1N6282ARL4 with alternatives