5082-2835
vs
5082-2811
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
HEWLETT PACKARD CO
|
| Package Description |
O-XALF-W2
|
O-LALF-W2
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.60
|
8541.10.00.60
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
1 pF
|
1.2 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
MIXER DIODE
|
MIXER DIODE
|
| Forward Voltage-Max (VF) |
0.34 V
|
1 V
|
| Frequency Band |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
|
| JESD-30 Code |
O-XALF-W2
|
O-LALF-W2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
8 V
|
15 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Breakdown Voltage-Min |
|
15 V
|
| JESD-609 Code |
|
e0
|
| Output Current-Max |
|
0.02 A
|
| Power Dissipation-Max |
|
0.25 W
|
| Reverse Current-Max |
|
0.1 µA
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare 5082-2835 with alternatives
Compare 5082-2811 with alternatives