5082-2835
vs
5082-2835
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
HEWLETT PACKARD CO
|
ASI SEMICONDUCTOR INC
|
| Package Description |
O-LALF-W2
|
O-XALF-W2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.60
|
8541.10.00.60
|
| Breakdown Voltage-Min |
8 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
1 pF
|
1 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
MIXER DIODE
|
MIXER DIODE
|
| Forward Voltage-Max (VF) |
0.45 V
|
0.34 V
|
| Frequency Band |
ULTRA HIGH FREQUENCY
|
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
| JESD-30 Code |
O-LALF-W2
|
O-XALF-W2
|
| JESD-609 Code |
e0
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Operating Temperature-Min |
-60 °C
|
-65 °C
|
| Output Current-Max |
0.01 A
|
|
| Package Body Material |
GLASS
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.15 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
8 V
|
8 V
|
| Reverse Current-Max |
0.1 µA
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
2
|
1
|
| Pin Count |
|
2
|
|
|
|
Compare 5082-2835 with alternatives
Compare 5082-2835 with alternatives