6308-1N
vs
DM54LS471J
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MONOLITHIC MEMORIES
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
DIP-20
|
DIP, DIP20,.3
|
| Reach Compliance Code |
unknown
|
unknown
|
| Access Time-Max |
200 ns
|
70 ns
|
| JESD-30 Code |
R-PDIP-T20
|
R-GDIP-T20
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
131072 bit
|
2048 bit
|
| Memory IC Type |
OTP ROM
|
OTP ROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
20
|
20
|
| Number of Words |
256 words
|
256 words
|
| Number of Words Code |
16000
|
256
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
75 °C
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
16KX8
|
256X8
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP20,.3
|
DIP20,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Current-Max |
0.155 mA
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
BIPOLAR
|
| Temperature Grade |
COMMERCIAL EXTENDED
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
3
|
| Pbfree Code |
|
No
|
| Part Package Code |
|
DIP
|
| Pin Count |
|
20
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8542.32.00.71
|
| Length |
|
24.51 mm
|
| Output Characteristics |
|
3-STATE
|
| Seated Height-Max |
|
5.08 mm
|
| Width |
|
7.62 mm
|
|
|
|
Compare 6308-1N with alternatives
Compare DM54LS471J with alternatives