63S081JXXXX vs N82S23ANB feature comparison

63S081JXXXX Monolithic Memories (RETIRED)

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N82S23ANB NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MONOLITHIC MEMORIES SIGNETICS CORP
Package Description , DIP, DIP16,.3
Reach Compliance Code unknown unknown
Access Time-Max 25 ns 25 ns
JESD-30 Code R-GDIP-T16 R-PDIP-T16
Memory Density 256 bit 256 bit
Memory IC Type OTP ROM OTP ROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 16 16
Number of Words 32 words 32 words
Number of Words Code 32 32
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 75 °C 75 °C
Operating Temperature-Min
Organization 32X8 32X8
Package Body Material CERAMIC, GLASS-SEALED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 5.25 V 5.25 V
Supply Voltage-Min (Vsup) 4.75 V 4.75 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS BIPOLAR
Temperature Grade COMMERCIAL EXTENDED COMMERCIAL EXTENDED
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 1 3
ECCN Code EAR99
HTS Code 8542.32.00.71
JESD-609 Code e0
Output Characteristics OPEN-COLLECTOR
Package Code DIP
Package Equivalence Code DIP16,.3
Supply Current-Max 0.096 mA
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Pitch 2.54 mm

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