8001203JX
vs
NMC27C32BQE250
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INTEL CORP
|
NATIONAL SEMICONDUCTOR CORP
|
| Part Package Code |
DIP
|
|
| Package Description |
DIP,
|
WDIP, DIP24,.6
|
| Pin Count |
24
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
EAR99
|
| HTS Code |
8542.32.00.61
|
8542.32.00.61
|
| Access Time-Max |
250 ns
|
250 ns
|
| JESD-30 Code |
R-XDIP-T24
|
R-GDIP-T24
|
| Memory Density |
32768 bit
|
32768 bit
|
| Memory IC Type |
UVPROM
|
UVPROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
24
|
24
|
| Number of Words |
4096 words
|
4096 words
|
| Number of Words Code |
4000
|
4000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
85 °C
|
| Operating Temperature-Min |
-55 °C
|
-40 °C
|
| Organization |
4KX8
|
4KX8
|
| Package Body Material |
UNSPECIFIED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
WDIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE, WINDOW
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Screening Level |
MIL-STD-883
|
|
| Supply Current-Max |
0.15 mA
|
0.02 mA
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
NMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
INDUSTRIAL
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| I/O Type |
|
COMMON
|
| JESD-609 Code |
|
e0
|
| Output Characteristics |
|
3-STATE
|
| Package Equivalence Code |
|
DIP24,.6
|
| Seated Height-Max |
|
5.715 mm
|
| Standby Current-Max |
|
0.0001 A
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Pitch |
|
2.54 mm
|
| Width |
|
15.24 mm
|
|
|
|
Compare 8001203JX with alternatives
Compare NMC27C32BQE250 with alternatives