82S123B/BEA
vs
82S23/BEA
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP,
|
DIP,
|
| Pin Count |
16
|
16
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.71
|
8542.32.00.71
|
| Access Time-Max |
30 ns
|
50 ns
|
| JESD-30 Code |
R-GDIP-T16
|
R-GDIP-T16
|
| Length |
19.535 mm
|
19.535 mm
|
| Memory Density |
256 bit
|
256 bit
|
| Memory IC Type |
OTP ROM
|
OTP ROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
16
|
16
|
| Number of Words |
32 words
|
32 words
|
| Number of Words Code |
32
|
32
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
32X8
|
32X8
|
| Output Characteristics |
3-STATE
|
OPEN-COLLECTOR
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
5.08 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
BIPOLAR
|
BIPOLAR
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
7.62 mm
|
7.62 mm
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare 82S123B/BEA with alternatives
Compare 82S23/BEA with alternatives