AM29DL640H55WHI
vs
KFG1G16Q2B-DEB60
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
ADVANCED MICRO DEVICES INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
TFBGA, BGA63,8X12,32
|
VFBGA, BGA63,10X12,32
|
| Pin Count |
63
|
63
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
55 ns
|
76 ns
|
| Alternate Memory Width |
8
|
|
| Boot Block |
BOTTOM/TOP
|
|
| Command User Interface |
YES
|
YES
|
| Common Flash Interface |
YES
|
|
| Data Polling |
YES
|
NO
|
| JESD-30 Code |
R-PBGA-B63
|
R-PBGA-B63
|
| JESD-609 Code |
e0
|
|
| Length |
12 mm
|
13 mm
|
| Memory Density |
67108864 bit
|
1073741824 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Sectors/Size |
16,126
|
1K
|
| Number of Terminals |
63
|
63
|
| Number of Words |
4194304 words
|
67108864 words
|
| Number of Words Code |
4000000
|
64000000
|
| Operating Mode |
ASYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-30 °C
|
| Organization |
4MX16
|
64MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
VFBGA
|
| Package Equivalence Code |
BGA63,8X12,32
|
BGA63,10X12,32
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
3 V
|
1.8 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Ready/Busy |
YES
|
YES
|
| Seated Height-Max |
1.2 mm
|
1 mm
|
| Sector Size |
8K,64K
|
64K
|
| Standby Current-Max |
0.000005 A
|
0.00005 A
|
| Supply Current-Max |
0.045 mA
|
0.04 mA
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
1.95 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
COMMERCIAL EXTENDED
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Toggle Bit |
YES
|
NO
|
| Type |
NOR TYPE
|
SLC NAND TYPE
|
| Width |
11 mm
|
10 mm
|
| Base Number Matches |
1
|
1
|
| Moisture Sensitivity Level |
|
3
|
| Page Size |
|
1K words
|
| Peak Reflow Temperature (Cel) |
|
260
|
|
|
|
Compare AM29DL640H55WHI with alternatives
Compare KFG1G16Q2B-DEB60 with alternatives