AM29LV640DU120RWHIN
vs
NAND01GW4A0BZB6F
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SPANSION INC
|
NUMONYX
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
12 X 11 MM, 0.80 MM PITCH, FBGA-63
|
9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-63
|
| Pin Count |
63
|
63
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
120 ns
|
35 ns
|
| Boot Block |
BOTTOM/TOP
|
|
| Command User Interface |
YES
|
|
| Common Flash Interface |
YES
|
|
| Data Polling |
YES
|
|
| JESD-30 Code |
R-PBGA-B63
|
R-PBGA-B63
|
| JESD-609 Code |
e0
|
|
| Length |
12 mm
|
11 mm
|
| Memory Density |
67108864 bit
|
1073741824 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
16
|
16
|
| Moisture Sensitivity Level |
3
|
|
| Number of Functions |
1
|
1
|
| Number of Sectors/Size |
128
|
|
| Number of Terminals |
63
|
63
|
| Number of Words |
4194304 words
|
67108864 words
|
| Number of Words Code |
4000000
|
64000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
4MX16
|
64MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Equivalence Code |
BGA63,8X12,32
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
3 V
|
3 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Ready/Busy |
YES
|
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Sector Size |
32K
|
|
| Standby Current-Max |
0.000005 A
|
|
| Supply Current-Max |
0.03 mA
|
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Toggle Bit |
YES
|
|
| Type |
NOR TYPE
|
SLC NAND TYPE
|
| Width |
11 mm
|
9 mm
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare AM29LV640DU120RWHIN with alternatives
Compare NAND01GW4A0BZB6F with alternatives