AM29LV640DU121RWHIN vs NAND01GR4A0DZA6 feature comparison

AM29LV640DU121RWHIN AMD

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NAND01GR4A0DZA6 Numonyx Memory Solutions

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer ADVANCED MICRO DEVICES INC NUMONYX
Part Package Code BGA BGA
Package Description 11 X 12 MM, 0.80 MM PITCH, FBGA-63 BGA,
Pin Count 63 63
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 120 ns 15000 ns
Command User Interface YES
Common Flash Interface YES
Data Polling YES
JESD-30 Code R-PBGA-B63 R-PBGA-B63
JESD-609 Code e0 e0
Length 12 mm
Memory Density 67108864 bit 1073741824 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Sectors/Size 128
Number of Terminals 63 63
Number of Words 4194304 words 67108864 words
Number of Words Code 4000000 64000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 4MX16 64MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA BGA
Package Equivalence Code BGA63,8X12,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 3 V 1.8 V
Qualification Status Not Qualified Not Qualified
Ready/Busy YES
Seated Height-Max 1.2 mm
Sector Size 32K
Standby Current-Max 0.000005 A
Supply Current-Max 0.03 mA
Supply Voltage-Max (Vsup) 3.6 V 1.95 V
Supply Voltage-Min (Vsup) 3 V 1.65 V
Supply Voltage-Nom (Vsup) 3.3 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM BOTTOM
Toggle Bit YES
Type NOR TYPE
Width 11 mm
Base Number Matches 1 4
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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