AM29LV640DU150WHE
vs
NAND01GR4B3CZA1E
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SPANSION INC
|
NUMONYX
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
BGA,
|
TFBGA,
|
| Pin Count |
63
|
63
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
150 ns
|
35 ns
|
| JESD-30 Code |
R-PBGA-B63
|
R-PBGA-B63
|
| JESD-609 Code |
e0
|
|
| Memory Density |
67108864 bit
|
1073741824 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
16
|
16
|
| Moisture Sensitivity Level |
3
|
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
63
|
63
|
| Number of Words |
4194304 words
|
67108864 words
|
| Number of Words Code |
4000000
|
64000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
70 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Organization |
4MX16
|
64MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
TFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
3 V
|
1.8 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
1.95 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
COMMERCIAL
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
2
|
2
|
| Pbfree Code |
|
Yes
|
| Length |
|
12 mm
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Seated Height-Max |
|
1.05 mm
|
| Terminal Pitch |
|
0.8 mm
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Width |
|
9.5 mm
|
|
|
|
Compare AM29LV640DU150WHE with alternatives
Compare NAND01GR4B3CZA1E with alternatives