AP9B102-8VC vs PDM31028SA20TSOITR feature comparison

AP9B102-8VC Integrated Silicon Solution Inc

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PDM31028SA20TSOITR Paradigm Technology Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer APTOS SEMICONDUCTOR CORP PARADIGM TECHNOLOGY INC
Package Description , ,
Reach Compliance Code unknown unknown
ECCN Code 3A991.B.2.B 3A991.B.2.B
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 8 ns 20 ns
JESD-30 Code R-PDSO-J28 R-PDSO-J28
Memory Density 1048576 bit 1048576 bit
Memory IC Type CACHE SRAM STANDARD SRAM
Memory Width 4 4
Number of Functions 1 1
Number of Terminals 28 28
Number of Words 262144 words 262144 words
Number of Words Code 256000 256000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 256KX4 256KX4
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 3 V 3 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Form J BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Number of Ports 1
Output Characteristics 3-STATE
Output Enable YES

Compare AP9B102-8VC with alternatives

Compare PDM31028SA20TSOITR with alternatives