APT10M07JVR vs IXFN150N10 feature comparison

APT10M07JVR Microsemi Corporation

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IXFN150N10 Littelfuse Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP LITTELFUSE INC
Part Package Code ISOTOP
Pin Count 4
Manufacturer Package Code ISOTOP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Drain Current-Max (ID) 225 A 150 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Power Dissipation-Max (Abs) 700 W 520 W
Base Number Matches 1 1
Rohs Code Yes
Package Description FLANGE MOUNT, R-PUFM-X4
HTS Code 8541.29.00.95
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain-source On Resistance-Max 0.012 Ω
JESD-30 Code R-PUFM-X4
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 520 W
Pulsed Drain Current-Max (IDM) 560 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare APT10M07JVR with alternatives

Compare IXFN150N10 with alternatives