Part Details for IXFN280N085 by IXYS Corporation
Overview of IXFN280N085 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFN280N085
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFN280N085-ND
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DigiKey | MOSFET N-CH 85V 280A SOT-227B Min Qty: 10 Lead time: 43 Weeks Container: Tube | Limited Supply - Call |
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$31.7160 | Buy Now |
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DISTI #
747-IXFN280N085
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Mouser Electronics | Discrete Semiconductor Modules 280 Amps 85V 0.0044 Rds RoHS: Compliant | 0 |
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Order Now |
Part Details for IXFN280N085
IXFN280N085 CAD Models
IXFN280N085 Part Data Attributes
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IXFN280N085
IXYS Corporation
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Datasheet
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IXFN280N085
IXYS Corporation
Power Field-Effect Transistor, 280A I(D), 85V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 4000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 85 V | |
| Drain Current-Max (ID) | 280 A | |
| Drain-source On Resistance-Max | 0.0044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 700 W | |
| Pulsed Drain Current-Max (IDM) | 1120 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN280N085
This table gives cross-reference parts and alternative options found for IXFN280N085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN280N085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUK416-100AE | TRANSISTOR 110 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IXFN280N085 vs BUK416-100AE |
| IXFN200N10P | Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | IXFN280N085 vs IXFN200N10P |
| IXFE180N10 | Power Field-Effect Transistor, 176A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXFN280N085 vs IXFE180N10 |
| APT10M07JVR | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | Microsemi Corporation | IXFN280N085 vs APT10M07JVR |
| BUK416-100BE | TRANSISTOR 100 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IXFN280N085 vs BUK416-100BE |
| APT10M07JVFR | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Microsemi Corporation | IXFN280N085 vs APT10M07JVFR |
| APT10M07JVR | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Advanced Power Technology | IXFN280N085 vs APT10M07JVR |
| IXFN150N10 | Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | Littelfuse Inc | IXFN280N085 vs IXFN150N10 |
| IXFN180N10 | Power Field-Effect Transistor, 180A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN280N085 vs IXFN180N10 |
| APT10M07JVFR | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFN280N085 vs APT10M07JVFR |