APT35GN120SG
vs
IGP20N65H5XKSA1
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
MICROSEMI CORP
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Collector Current-Max (IC) |
94 A
|
42 A
|
Collector-Emitter Voltage-Max |
1200 V
|
650 V
|
Gate-Emitter Thr Voltage-Max |
6.5 V
|
|
Gate-Emitter Voltage-Max |
30 V
|
|
Operating Temperature-Max |
150 °C
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
379 W
|
|
Surface Mount |
YES
|
NO
|
Base Number Matches |
2
|
1
|
Package Description |
|
TO-220, 3 PIN
|
Factory Lead Time |
|
19 Weeks
|
Case Connection |
|
COLLECTOR
|
Configuration |
|
SINGLE
|
JEDEC-95 Code |
|
TO-220AB
|
JESD-30 Code |
|
R-PSFM-T3
|
JESD-609 Code |
|
e3
|
Number of Elements |
|
1
|
Number of Terminals |
|
3
|
Operating Temperature-Min |
|
-40 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Terminal Finish |
|
Tin (Sn)
|
Terminal Form |
|
THROUGH-HOLE
|
Terminal Position |
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
POWER CONTROL
|
Transistor Element Material |
|
SILICON
|
Turn-off Time-Nom (toff) |
|
218 ns
|
Turn-on Time-Nom (ton) |
|
28 ns
|
|
|
|
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