APT35GN120SG vs IGP20N65H5XKSA1 feature comparison

APT35GN120SG Microsemi Corporation

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IGP20N65H5XKSA1 Infineon Technologies AG

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 94 A 42 A
Collector-Emitter Voltage-Max 1200 V 650 V
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 30 V
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 379 W
Surface Mount YES NO
Base Number Matches 2 1
Package Description TO-220, 3 PIN
Factory Lead Time 19 Weeks
Case Connection COLLECTOR
Configuration SINGLE
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 218 ns
Turn-on Time-Nom (ton) 28 ns

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