AS29F010CW-12/Q vs AM29F010-120DWC1 feature comparison

AS29F010CW-12/Q Micross Components

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AM29F010-120DWC1 AMD

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer AUSTIN SEMICONDUCTOR INC ADVANCED MICRO DEVICES INC
Part Package Code DIP
Package Description 0.600 INCH, CERAMIC, DIP-32 DIE,
Pin Count 32
Reach Compliance Code unknown unknown
ECCN Code 3A001.A.2.C EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 120 ns 120 ns
JESD-30 Code R-CDIP-T32 X-XUUC-N30
JESD-609 Code e0
Length 42.418 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 30
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 70 °C
Operating Temperature-Min -55 °C
Organization 128KX8 128KX8
Package Body Material CERAMIC, METAL-SEALED COFIRED UNSPECIFIED
Package Code DIP DIE
Package Shape RECTANGULAR UNSPECIFIED
Package Style IN-LINE UNCASED CHIP
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 5 V 5 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 5.1308 mm
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO YES
Technology CMOS CMOS
Temperature Grade MILITARY COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE NO LEAD
Terminal Pitch 2.54 mm
Terminal Position DUAL UPPER
Type NOR TYPE NOR TYPE
Width 15.24 mm
Base Number Matches 1 1
Additional Feature MINIMUM 100K PROGRAM/ERASE CYCLE; 20 YEAR DATA RETENTION
Data Retention Time-Min 20
Output Characteristics 3-STATE

Compare AS29F010CW-12/Q with alternatives

Compare AM29F010-120DWC1 with alternatives