AS4C64M32MD1A-5BINTR
vs
MT46H64M32LFCX-75AAT:B
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ALLIANCE MEMORY INC
|
MICRON TECHNOLOGY INC
|
Package Description |
VFBGA, BGA90,9X15,32
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.36
|
|
Factory Lead Time |
16 Weeks
|
|
Access Mode |
FOUR BANK PAGE BURST
|
|
Access Time-Max |
5 ns
|
|
Additional Feature |
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK) |
200 MHz
|
|
I/O Type |
COMMON
|
|
Interleaved Burst Length |
2,4,8,16
|
|
JESD-30 Code |
R-PBGA-B90
|
|
Length |
13 mm
|
|
Memory Density |
2147483648 bit
|
|
Memory IC Type |
LPDDR1 DRAM
|
DDR DRAM
|
Memory Width |
32
|
|
Number of Functions |
1
|
|
Number of Ports |
1
|
|
Number of Terminals |
90
|
|
Number of Words |
67108864 words
|
|
Number of Words Code |
64000000
|
|
Operating Mode |
SYNCHRONOUS
|
|
Operating Temperature-Max |
85 °C
|
|
Operating Temperature-Min |
-40 °C
|
|
Organization |
64MX32
|
|
Output Characteristics |
3-STATE
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Code |
VFBGA
|
|
Package Equivalence Code |
BGA90,9X15,32
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
|
|
Seated Height-Max |
1 mm
|
|
Self Refresh |
YES
|
|
Sequential Burst Length |
2,4,8,16
|
|
Standby Voltage-Min |
1.7 V
|
|
Supply Voltage-Max (Vsup) |
1.95 V
|
|
Supply Voltage-Min (Vsup) |
1.7 V
|
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
|
Surface Mount |
YES
|
|
Technology |
CMOS
|
|
Temperature Grade |
INDUSTRIAL
|
|
Terminal Form |
BALL
|
|
Terminal Pitch |
0.8 mm
|
|
Terminal Position |
BOTTOM
|
|
Width |
8 mm
|
|
Base Number Matches |
1
|
1
|
|
|
|
Compare AS4C64M32MD1A-5BINTR with alternatives
Compare MT46H64M32LFCX-75AAT:B with alternatives