AT28C256-20DM/883-815
vs
AT28C256E-20DM/883-815
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
DIP-28
|
DIP-28
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Factory Lead Time |
23 Weeks
|
23 Weeks
|
| Samacsys Manufacturer |
Microchip
|
Microchip
|
| Access Time-Max |
200 ns
|
200 ns
|
| Additional Feature |
AUTOMATIC WRITE
|
AUTOMATIC WRITE
|
| JESD-30 Code |
R-GDIP-T28
|
R-GDIP-T28
|
| JESD-609 Code |
e0
|
e0
|
| Length |
37.215 mm
|
37.215 mm
|
| Memory Density |
262144 bit
|
262144 bit
|
| Memory IC Type |
EEPROM
|
EEPROM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
28
|
28
|
| Number of Words |
32768 words
|
32768 words
|
| Number of Words Code |
32000
|
32000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
32KX8
|
32KX8
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Programming Voltage |
5 V
|
5 V
|
| Screening Level |
MIL-STD-883 Class B
|
MIL-STD-883 Class C
|
| Seated Height-Max |
5.72 mm
|
5.72 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Width |
15.24 mm
|
15.24 mm
|
| Write Cycle Time-Max (tWC) |
10 ms
|
10 ms
|
| Base Number Matches |
1
|
1
|
| Data Retention Time-Min |
|
10
|
| Endurance |
|
100000 Write/Erase Cycles
|
| Number of Ports |
|
1
|
| Package Equivalence Code |
|
DIP28,.6
|
| Standby Current-Max |
|
0.0003 A
|
| Supply Current-Max |
|
0.05 mA
|
| Write Protection |
|
HARDWARE/SOFTWARE
|
|
|
|
Compare AT28C256-20DM/883-815 with alternatives
Compare AT28C256E-20DM/883-815 with alternatives